IRFS750A

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Mfr.Part #
IRFS750A
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 400V 8.4A TO220F
Stock
23,793
In Stock :
23,793

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4V @ 250µA
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Drain Current-Max (Abs) (ID) :
8.4A
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Terminal Finish :
MATTE TIN
Case Connection :
Isolated
Transistor Element Material :
SILICON
Reach Compliance Code :
Unknown
Peak Reflow Temperature (Cel) :
Not Applicable
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
131nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
400V
Avalanche Energy Rating (Eas) :
1210 mJ
Surface Mount :
No
Terminal Position :
Single
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
8.4A Tc
Drain-source On Resistance-Max :
0.3Ohm
Pin Count :
3
Package / Case :
TO-220-3 Full Pack
Number of Terminations :
3
Power Dissipation-Max :
49W Tc
Input Capacitance (Ciss) (Max) @ Vds :
2.78pF @ 25V
Pulsed Drain Current-Max (IDM) :
60A
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
400V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
300m Ω @ 4.2A, 10V
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
COMMERCIAL
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSFM-T3
Datasheets
IRFS750A
Introducing Transistors - FETs, MOSFETs - Single onsemi IRFS750A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, Number of Terminations:3, IRFS750A pinout, IRFS750A datasheet PDF, IRFS750A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi IRFS750A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi IRFS750A


N-Channel Tube 300m Ω @ 4.2A, 10V ±30V 2.78pF @ 25V 131nC @ 10V 400V TO-220-3 Full Pack

IRFS750A Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1210 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.78pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 8.4A.Pulsed drain current is maximum rated peak drain current 60A.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFS750A Features


the avalanche energy rating (Eas) is 1210 mJ
based on its rated peak drain current 60A.
a 400V drain to source voltage (Vdss)


IRFS750A Applications


There are a lot of Rochester Electronics, LLC
IRFS750A applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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