IRFS7440TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Fall Time (Typ) :

68 ns

Rise Time :

68ns

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Input Capacitance (Ciss) (Max) @ Vds :

4730pF @ 25V

Power Dissipation-Max :

208W Tc

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

3 V

Number of Elements :

1

Turn On Delay Time :

24 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation :

208W

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Length :

10.67mm

ECCN Code :

EAR99

Number of Terminations :

2

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

772A

Resistance :

2.5MOhm

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

120A

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 100A, 10V

Published :

2008

Number of Pins :

3

Width :

9.65mm

Series :

HEXFET®, StrongIRFET™

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

JESD-30 Code :

R-PSSO-G2

Height :

4.83mm

Turn-Off Delay Time :

115 ns

Drain Current-Max (Abs) (ID) :

208A

Lead Free :

Lead Free

Threshold Voltage :

3V