IRFS7440PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.83mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 100A, 10V

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Power Dissipation-Max :

208W Tc

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Transistor Element Material :

SILICON

Recovery Time :

24 ns

Turn-Off Delay Time :

115 ns

Published :

2007

Radiation Hardening :

No

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

4730pF @ 25V

Vgs (Max) :

±20V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Drain to Source Breakdown Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn On Delay Time :

24 ns

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

3V

FET Type :

N-Channel

Case Connection :

DRAIN

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Rise Time :

68ns

Length :

10.67mm

Fall Time (Typ) :

68 ns

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

120A

Width :

9.65mm

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

772A

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

3 V

Drain Current-Max (Abs) (ID) :

208A

Power Dissipation :

208W

Transistor Application :

SWITCHING

Mount :

Surface Mount

Series :

HEXFET®, StrongIRFET™

Drain-source On Resistance-Max :

0.0025Ohm