IRFS7437PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Packaging :

Tube

Vgs(th) (Max) @ Id :

3.9V @ 150μA

Width :

9.65mm

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 100A, 10V

Radiation Hardening :

No

Rise Time :

70ns

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

53 ns

Threshold Voltage :

3V

Length :

10.67mm

Avalanche Energy Rating (Eas) :

802 mJ

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

195A

Element Configuration :

Single

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.83mm

ECCN Code :

EAR99

Nominal Vgs :

3 V

Turn On Delay Time :

19 ns

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Power Dissipation-Max :

230W Tc

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

7330pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

40V

Published :

2007

Series :

HEXFET®, StrongIRFET™

Recovery Time :

30 ns

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

195A Tc

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

230W

Mount :

Surface Mount

Turn-Off Delay Time :

78 ns