IRFS7434TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

40V

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Rise Time :

68ns

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

195A

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

294W

Weight :

3.949996g

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2006

Number of Terminations :

2

Transistor Element Material :

SILICON

FET Type :

N-Channel

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

40V

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 100A, 10V

Gate Charge (Qg) (Max) @ Vgs :

324nC @ 10V

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Series :

HEXFET®, StrongIRFET™

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

68 ns

Power Dissipation-Max :

294W Tc

Pulsed Drain Current-Max (IDM) :

780A

Lead Free :

Lead Free

Turn On Delay Time :

24 ns

Input Capacitance (Ciss) (Max) @ Vds :

10820pF @ 25V

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Channels :

1

Turn-Off Delay Time :

115 ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Factory Lead Time :

12 Weeks