IRFS7434PBF
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- Mfr.Part #
- IRFS7434PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 195A D2PAK
- Stock
- 32,692
- In Stock ：
- 32,692
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3.9V @ 250μA
- Turn On Delay Time :
- 24 ns
- Length :
- 10.67mm
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 3.949996g
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Threshold Voltage :
- 3V
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Rise Time :
- 68ns
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 100A, 10V
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 780A
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 40V
- DS Breakdown Voltage-Min :
- 40V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Continuous Drain Current (ID) :
- 195A
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 324nC @ 10V
- REACH SVHC :
- No SVHC
- Number of Channels :
- 1
- Width :
- 9.65mm
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 4.83mm
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- HEXFET®, StrongIRFET™
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Turn-Off Delay Time :
- 115 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 294W
- Fall Time (Typ) :
- 68 ns
- Power Dissipation-Max :
- 294W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 10820pF @ 25V
- Datasheets
- IRFS7434PBF
N-Channel Tube 1.6m Ω @ 100A, 10V ±20V 10820pF @ 25V 324nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS7434PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10820pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 115 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 780A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 24 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
IRFS7434PBF Features
a continuous drain current (ID) of 195A
the turn-off delay time is 115 ns
based on its rated peak drain current 780A.
a threshold voltage of 3V
a 40V drain to source voltage (Vdss)
IRFS7434PBF Applications
There are a lot of Infineon Technologies
IRFS7434PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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