IRFS7430PBF
- Mfr.Part #
- IRFS7430PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRENCH <= 40V
- Stock
- 15,090
- In Stock :
- 15,090
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Height :
- 4.83mm
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.67mm
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Number of Channels :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 1.2m Ω @ 100A, 10V
- Fall Time (Typ) :
- 100 ns
- Power Dissipation :
- 375W
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Threshold Voltage :
- 3.9V
- Gate Charge (Qg) (Max) @ Vgs :
- 460nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 14240pF @ 25V
- Vgs(th) (Max) @ Id :
- 3.9V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Turn-Off Delay Time :
- 160 ns
- Turn On Delay Time :
- 32 ns
- Series :
- HEXFET®, StrongIRFET™
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 375W Tc
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Drain to Source Voltage (Vdss) :
- 40V
- Continuous Drain Current (ID) :
- 195A
- Rise Time :
- 105ns
- Width :
- 9.65mm
- Weight :
- 3.949996g
- Datasheets
- IRFS7430PBF

N-Channel Tube 1.2m Ω @ 100A, 10V ±20V 14240pF @ 25V 460nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS7430PBF Overview
The maximum input capacitance of this device is 14240pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 195A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 160 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 32 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3.9V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (6V 10V), this device helps reduce its power consumption.
IRFS7430PBF Features
a continuous drain current (ID) of 195A
the turn-off delay time is 160 ns
a threshold voltage of 3.9V
a 40V drain to source voltage (Vdss)
IRFS7430PBF Applications
There are a lot of Infineon Technologies
IRFS7430PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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