IRFS630B

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Fairchild Semiconductor Corporation

Avalanche Energy Rating (Eas) :

160 mJ

Pin Count :

3

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

200 V

Terminal Finish :

Tin/Lead (Sn/Pb)

Qualification Status :

Not Qualified

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

38 W

Subcategory :

FET General Purpose Power

Drain Current-Max (Abs) (ID) :

6.5 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e0

Number of Terminals :

3

Pulsed Drain Current-Max (IDM) :

36 A

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.4 Ω

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Transistor Application :

SWITCHING

Number of Elements :

1

Case Connection :

Isolated

Transistor Element Material :

SILICON