IRFS59N10DPBF
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- Mfr.Part #
- IRFS59N10DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 59A D2PAK
- Stock
- 4,528
- In Stock ：
- 4,528
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- D2PAK
- Current - Continuous Drain (Id) @ 25°C :
- 59A Tc
- Power Dissipation-Max :
- 3.8W Ta 200W Tc
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.45pF @ 25V
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 25mOhm @ 35.4A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Datasheets
- IRFS59N10DPBF
N-Channel Tube 25mOhm @ 35.4A, 10V ±30V 2.45pF @ 25V 114nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS59N10DPBF Overview
A device's maximal input capacitance is 2.45pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFS59N10DPBF Features
a 100V drain to source voltage (Vdss)
IRFS59N10DPBF Applications
There are a lot of Rochester Electronics, LLC
IRFS59N10DPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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