IRFS5620PBF
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- Mfr.Part #
- IRFS5620PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 24A D2PAK
- Stock
- 9,763
- In Stock ：
- 9,763
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Drain to Source Resistance :
- 77.5mOhm
- Drain to Source Voltage (Vdss) :
- 200V
- Min Operating Temperature :
- -55°C
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Drain to Source Breakdown Voltage :
- 200V
- Rds On (Max) @ Id, Vgs :
- 77.5mOhm @ 15A, 10V
- Rise Time :
- 14.6ns
- Radiation Hardening :
- No
- Max Operating Temperature :
- 175°C
- Rds On Max :
- 77.5 mΩ
- Published :
- 2008
- Input Capacitance (Ciss) (Max) @ Vds :
- 1710pF @ 50V
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Nominal Vgs :
- 3 V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Fall Time (Typ) :
- 9.9 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Surface Mount
- Input Capacitance :
- 1.71nF
- Continuous Drain Current (ID) :
- 24A
- Turn-Off Delay Time :
- 17.1 ns
- Power Dissipation-Max :
- 144W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package :
- D2PAK
- Power Dissipation :
- 144W
- Threshold Voltage :
- 3V
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 8.6 ns
- Datasheets
- IRFS5620PBF
N-Channel Tube 77.5mOhm @ 15A, 10V ±20V 1710pF @ 50V 38nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS5620PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1710pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 24A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 17.1 ns.This device has a drain-to-source resistance of 77.5mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.6 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFS5620PBF Features
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 17.1 ns
single MOSFETs transistor is 77.5mOhm
a threshold voltage of 3V
a 200V drain to source voltage (Vdss)
IRFS5620PBF Applications
There are a lot of Infineon Technologies
IRFS5620PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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