IRFS5615TRLPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

13.1 ns

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

Configuration :

SINGLE WITH BUILT-IN DIODE

Width :

9.652mm

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Case Connection :

DRAIN

Length :

10.668mm

Power Dissipation-Max :

144W Tc

Number of Terminations :

2

Drain-source On Resistance-Max :

0.042Ohm

Radiation Hardening :

No

Factory Lead Time :

10 Weeks

Rise Time :

23.1ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

150V

Number of Pins :

3

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Power Dissipation :

144W

Height :

4.826mm

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Published :

2008

Turn On Delay Time :

8.9 ns

Mounting Type :

Surface Mount

Turn-Off Delay Time :

17.2 ns

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

42m Ω @ 21A, 10V

Continuous Drain Current (ID) :

33A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 100µA

Threshold Voltage :

5V

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier