IRFS5615TRLPBF
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- Mfr.Part #
- IRFS5615TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 33A D2PAK
- Stock
- 2,064
- In Stock ：
- 2,064
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Width :
- 9.652mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 17.2 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1750pF @ 50V
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.042Ohm
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 21A, 10V
- Fall Time (Typ) :
- 13.1 ns
- Published :
- 2008
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Mounting Type :
- Surface Mount
- Length :
- 10.668mm
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Terminal Position :
- Single
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 144W
- Continuous Drain Current (ID) :
- 33A
- Height :
- 4.826mm
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 10 Weeks
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 144W Tc
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Terminal Form :
- Gull wing
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 150V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 23.1ns
- Turn On Delay Time :
- 8.9 ns
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- IRFS5615TRLPBF
N-Channel Tape & Reel (TR) 42m Ω @ 21A, 10V ±20V 1750pF @ 50V 40nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS5615TRLPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1750pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 150V.As a result of its turn-off delay time, which is 17.2 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFS5615TRLPBF Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 17.2 ns
a threshold voltage of 5V
IRFS5615TRLPBF Applications
There are a lot of Infineon Technologies
IRFS5615TRLPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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