IRFS540A
- Mfr.Part #
- IRFS540A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 17A TO220F
- Stock
- 28,585
- In Stock :
- 28,585
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Qualification Status :
- COMMERCIAL
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 100V
- DS Breakdown Voltage-Min :
- 100V
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 385 mJ
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Package / Case :
- TO-220-3 Full Pack
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- JESD-30 Code :
- R-PSFM-T3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 52m Ω @ 8.5A, 10V
- Reach Compliance Code :
- Unknown
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 110A
- Drain-source On Resistance-Max :
- 0.052Ohm
- Drain Current-Max (Abs) (ID) :
- 17A
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 78nC @ 10V
- Terminal Finish :
- MATTE TIN
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 39W Tc
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.71pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRFS540A

N-Channel Tube 52m Ω @ 8.5A, 10V 1.71pF @ 25V 78nC @ 10V 100V TO-220-3 Full Pack
IRFS540A Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 385 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1.71pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 17A.There is a peak drain current of 110A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFS540A Features
the avalanche energy rating (Eas) is 385 mJ
based on its rated peak drain current 110A.
a 100V drain to source voltage (Vdss)
IRFS540A Applications
There are a lot of Rochester Electronics, LLC
IRFS540A applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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