IRFS52N15DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

25 ns

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

60A

Termination :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

51A Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

150V

Length :

10.668mm

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

240A

Vgs (Max) :

±30V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Resistance :

32mOhm

Threshold Voltage :

5V

Drain to Source Breakdown Voltage :

150V

Operating Temperature :

-55°C~175°C TJ

Current Rating :

60A

Factory Lead Time :

52 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

47ns

Mount :

Surface Mount

Turn On Delay Time :

16 ns

Width :

9.65mm

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2770pF @ 25V

Power Dissipation-Max :

3.8W Ta 230W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Height :

4.826mm

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

320W

Element Configuration :

Single

Turn-Off Delay Time :

28 ns

ECCN Code :

EAR99

Packaging :

Tube

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Nominal Vgs :

5 V

Number of Terminations :

2

Published :

2002

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

32m Ω @ 36A, 10V

Dual Supply Voltage :

150V

Avalanche Energy Rating (Eas) :

470 mJ

Mounting Type :

Surface Mount

Series :

HEXFET®

FET Type :

N-Channel

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified