IRFS4620TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

100A

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Length :

10.668mm

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Drain-source On Resistance-Max :

0.0775Ohm

Power Dissipation :

144W

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn On Delay Time :

13.4 ns

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1710pF @ 50V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

144W Tc

Rise Time :

22.4ns

Width :

4.826mm

Current - Continuous Drain (Id) @ 25°C :

24A Tc

FET Type :

N-Channel

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

77.5m Ω @ 15A, 10V

Vgs(th) (Max) @ Id :

5V @ 100µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Number of Elements :

1

Published :

2008

Fall Time (Typ) :

14.8 ns

Turn-Off Delay Time :

25.4 ns

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Height :

9.65mm

Case Connection :

DRAIN

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mount :

Surface Mount, Through Hole

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

200V

Number of Pins :

3

Continuous Drain Current (ID) :

24A

Radiation Hardening :

No