IRFS4615TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Height :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Length :

10.668mm

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Number of Terminations :

2

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

5V @ 100µA

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Element Configuration :

Single

Turn On Delay Time :

15 ns

Rise Time :

35ns

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

Power Dissipation :

144W

Mount :

Surface Mount

ECCN Code :

EAR99

Width :

9.65mm

Fall Time (Typ) :

20 ns

Case Connection :

DRAIN

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Power Dissipation-Max :

144W Tc

FET Type :

N-Channel

Turn-Off Delay Time :

25 ns

Rds On (Max) @ Id, Vgs :

42m Ω @ 21A, 10V

Number of Elements :

1

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

33A

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

150V

Drain-source On Resistance-Max :

0.042Ohm

Radiation Hardening :

No