IRFS4615PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

Termination :

SMD/SMT

JESD-609 Code :

e3

Fall Time (Typ) :

20 ns

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

25 ns

Published :

2008

Rds On (Max) @ Id, Vgs :

42m Ω @ 21A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nominal Vgs :

5 V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Number of Terminations :

2

Radiation Hardening :

No

Series :

HEXFET®

REACH SVHC :

No SVHC

Number of Elements :

1

Rise Time :

35ns

Drain to Source Breakdown Voltage :

150V

Packaging :

Tube

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.042Ohm

Power Dissipation-Max :

144W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Dual Supply Voltage :

150V

Width :

9.65mm

Power Dissipation :

144W

Mount :

Surface Mount

Terminal Form :

Gull wing

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 100µA

Threshold Voltage :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Number of Pins :

3

Continuous Drain Current (ID) :

33A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Length :

10.67mm

Height :

4.83mm

Turn On Delay Time :

15 ns

Operating Temperature :

-55°C~175°C TJ