IRFS4610TRLPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Published :

2004

Vgs(th) (Max) @ Id :

4V @ 100µA

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Rise Time :

87ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

14m Ω @ 44A, 10V

Power Dissipation-Max :

190W Tc

Power Dissipation :

190W

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 50V

Width :

9.65mm

Continuous Drain Current (ID) :

73A

Pulsed Drain Current-Max (IDM) :

290A

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Transistor Element Material :

SILICON

Height :

4.826mm

Drain to Source Breakdown Voltage :

100V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

FET Type :

N-Channel

Length :

10.668mm

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

4V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Fall Time (Typ) :

70 ns

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Turn On Delay Time :

18 ns

Turn-Off Delay Time :

53 ns

Resistance :

14mOhm

Number of Pins :

3