IRFS4610TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

14m Ω @ 44A, 10V

Height :

4.826mm

Power Dissipation :

190W

FET Type :

N-Channel

Width :

9.65mm

Turn On Delay Time :

18 ns

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Continuous Drain Current (ID) :

73A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

290A

Series :

HEXFET®

JESD-609 Code :

e3

Published :

2004

Terminal Form :

Gull wing

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Turn-Off Delay Time :

53 ns

Radiation Hardening :

No

REACH SVHC :

No SVHC

Length :

10.668mm

Vgs(th) (Max) @ Id :

4V @ 100µA

Fall Time (Typ) :

70 ns

JESD-30 Code :

R-PSSO-G2

Rise Time :

87ns

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

14mOhm

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 50V

Power Dissipation-Max :

190W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Contact Plating :

Tin

Mounting Type :

Surface Mount

Terminal Position :

Single

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Transistor Element Material :

SILICON