IRFS4610PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

14mOhm

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

70 ns

Voltage - Rated DC :

100V

Lead Free :

Lead Free

FET Type :

N-Channel

Turn On Delay Time :

18 ns

Rds On (Max) @ Id, Vgs :

14m Ω @ 44A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

73A

Published :

2006

JESD-30 Code :

R-PSSO-G2

Current Rating :

73A

Dual Supply Voltage :

100V

Vgs(th) (Max) @ Id :

4V @ 100µA

Packaging :

Tube

Length :

10.668mm

Width :

9.65mm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

53 ns

Operating Mode :

ENHANCEMENT MODE

Recovery Time :

53 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Power Dissipation :

190W

Number of Pins :

3

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Number of Terminations :

2

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Rise Time :

87ns

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 50V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Pulsed Drain Current-Max (IDM) :

290A

Number of Elements :

1

Vgs (Max) :

±20V

Series :

HEXFET®

Height :

4.826mm

Mount :

Surface Mount

Power Dissipation-Max :

190W Tc