IRFS4510TRLPBF
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- Mfr.Part #
- IRFS4510TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 61A D2PAK
- Stock
- 3,690
- In Stock ：
- 3,690
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- FET Type :
- N-Channel
- Turn On Delay Time :
- 13 ns
- Factory Lead Time :
- 12 Weeks
- Threshold Voltage :
- 2V
- Published :
- 2012
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 61A
- Power Dissipation :
- 140W
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Rise Time :
- 32ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3180pF @ 50V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 87nC @ 10V
- Case Connection :
- DRAIN
- Series :
- HEXFET®
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max :
- 140W Tc
- Pulsed Drain Current-Max (IDM) :
- 250A
- Turn-Off Delay Time :
- 28 ns
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 13.9m Ω @ 37A, 10V
- Datasheets
- IRFS4510TRLPBF
N-Channel Tape & Reel (TR) 13.9m Ω @ 37A, 10V ±20V 3180pF @ 50V 87nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4510TRLPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3180pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 61A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 28 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 250A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFS4510TRLPBF Features
a continuous drain current (ID) of 61A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 250A.
a threshold voltage of 2V
IRFS4510TRLPBF Applications
There are a lot of Infineon Technologies
IRFS4510TRLPBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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