IRFS4510PBF
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- Mfr.Part #
- IRFS4510PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 61A D2PAK
- Stock
- 4,582
- In Stock ：
- 4,582
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 100V
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 140W
- Gate Charge (Qg) (Max) @ Vgs :
- 87nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 13.9m Ω @ 37A, 10V
- Turn-Off Delay Time :
- 28 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3180pF @ 50V
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Continuous Drain Current (ID) :
- 61A
- Series :
- HEXFET®
- REACH SVHC :
- No SVHC
- Width :
- 9.65mm
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 61A Tc
- Rise Time :
- 32ns
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 13 ns
- Number of Pins :
- 3
- Power Dissipation-Max :
- 140W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Height :
- 4.83mm
- Element Configuration :
- Single
- Factory Lead Time :
- 52 Weeks
- Length :
- 10.67mm
- Nominal Vgs :
- 3 V
- Published :
- 2007
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 3V
- Datasheets
- IRFS4510PBF
N-Channel Tube 13.9m Ω @ 37A, 10V ±20V 3180pF @ 50V 87nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4510PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3180pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 61A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 28 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFS4510PBF Features
a continuous drain current (ID) of 61A
the turn-off delay time is 28 ns
a threshold voltage of 3V
a 100V drain to source voltage (Vdss)
IRFS4510PBF Applications
There are a lot of Infineon Technologies
IRFS4510PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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