IRFS450B

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

9.6A Tc

Power Dissipation-Max :

96W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

38.4A

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

990 mJ

Case Connection :

Isolated

Factory Lead Time :

4 Weeks

Turn On Delay Time :

45 ns

Rise Time :

130ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

96W

ECCN Code :

EAR99

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-3P-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

390m Ω @ 4.8A, 10V

Packaging :

Tube

Drain to Source Breakdown Voltage :

500V

Element Configuration :

Single

Weight :

6.962g

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

113nC @ 10V

Continuous Drain Current (ID) :

9.6A

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

260 ns

Drain-source On Resistance-Max :

0.39Ohm

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

125 ns

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Pbfree Code :

yes

Transistor Element Material :

SILICON