IRFS4410ZTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

97A

Rise Time :

52ns

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4820pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

100V

JESD-609 Code :

e3

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 150μA

Current - Continuous Drain (Id) @ 25°C :

97A Tc

Case Connection :

DRAIN

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

9m Ω @ 58A, 10V

Number of Elements :

1

Mounting Type :

Surface Mount

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Power Dissipation :

230W

Transistor Element Material :

SILICON

Number of Terminations :

2

FET Type :

N-Channel

Power Dissipation-Max :

230W Tc

Transistor Application :

SWITCHING

Fall Time (Typ) :

57 ns

Qualification Status :

Not Qualified

Base Part Number :

IRFS4410

Mount :

Surface Mount

Resistance :

9mOhm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

242 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB