IRFS4410ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Dual Supply Voltage :

100V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

FET Type :

N-Channel

Termination :

SMD/SMT

Threshold Voltage :

4V

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Power Dissipation :

230W

Continuous Drain Current (ID) :

97A

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

100V

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

4820pF @ 50V

Turn On Delay Time :

16 ns

Recovery Time :

57 ns

Operating Temperature :

-55°C~175°C TJ

Rise Time :

52ns

Gate to Source Voltage (Vgs) :

20V

Resistance :

9mOhm

Width :

9.65mm

Avalanche Energy Rating (Eas) :

242 mJ

Fall Time (Typ) :

57 ns

Turn-Off Delay Time :

43 ns

Length :

10.668mm

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

97A Tc

Vgs(th) (Max) @ Id :

4V @ 150μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Nominal Vgs :

4 V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

2

ECCN Code :

EAR99

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

9m Ω @ 58A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Power Dissipation-Max :

230W Tc

Packaging :

Tube

Number of Pins :

3

Height :

4.826mm

Lead Free :

Lead Free