IRFS4410ZPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.65mm

Continuous Drain Current (ID) :

97A

Turn On Delay Time :

16 ns

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Recovery Time :

57 ns

REACH SVHC :

No SVHC

Power Dissipation-Max :

230W Tc

Threshold Voltage :

4V

Length :

10.668mm

Dual Supply Voltage :

100V

Power Dissipation :

230W

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 150μA

Drain to Source Breakdown Voltage :

100V

Rise Time :

52ns

Packaging :

Tube

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

97A Tc

Rds On (Max) @ Id, Vgs :

9m Ω @ 58A, 10V

Avalanche Energy Rating (Eas) :

242 mJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Termination :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Height :

4.826mm

Element Configuration :

Single

Terminal Form :

Gull wing

Published :

2008

Turn-Off Delay Time :

43 ns

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

4820pF @ 50V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Mount :

Surface Mount

ECCN Code :

EAR99

Fall Time (Typ) :

57 ns

Number of Terminations :

2

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

4 V

Resistance :

9mOhm

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ