IRFS4410

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

96A

Peak Reflow Temperature (Cel) :

225

Transistor Element Material :

SILICON

Power Dissipation-Max :

250W Tc

Surface Mount :

yes

Case Connection :

DRAIN

Terminal Finish :

TIN LEAD

Rds On (Max) @ Id, Vgs :

10m Ω @ 58A, 10V

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 50V

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 150μA

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Drain-source On Resistance-Max :

0.01Ohm

Avalanche Energy Rating (Eas) :

220 mJ

Packaging :

Tube

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

380A

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

JESD-609 Code :

e0

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100V