IRFS4321TRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4460pF @ 25V

Length :

10.668mm

Drain Current-Max (Abs) (ID) :

75A

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

150V

Published :

2008

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

18 ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

83A

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.015Ohm

Width :

9.65mm

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Terminal Form :

Gull wing

Fall Time (Typ) :

35 ns

Turn-Off Delay Time :

25 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

JESD-609 Code :

e3

Power Dissipation :

330W

Factory Lead Time :

16 Weeks

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

120 mJ

Case Connection :

DRAIN

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Height :

4.826mm

Vgs (Max) :

±20V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

15m Ω @ 33A, 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Rise Time :

60ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

350W Tc

Series :

HEXFET®

Transistor Element Material :

SILICON