IRFS4321-7PPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G6

Input Capacitance (Ciss) (Max) @ Vds :

4460pF @ 50V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

350W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Series :

HEXFET®

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

150V

Rds On (Max) @ Id, Vgs :

14.7m Ω @ 34A, 10V

Drain-source On Resistance-Max :

0.0147Ohm

Drain to Source Voltage (Vdss) :

150V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Vgs (Max) :

±20V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

86A

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

343A

Mount :

Surface Mount

FET Type :

N-Channel

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

120 mJ

Current - Continuous Drain (Id) @ 25°C :

86A Tc

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA