IRFS4310ZTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

55 ns

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

57 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

6m Ω @ 75A, 10V

Number of Terminations :

2

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

6860pF @ 50V

Power Dissipation-Max :

250W Tc

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Number of Pins :

3

Power Dissipation :

250W

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

560A

Width :

9.65mm

Vgs(th) (Max) @ Id :

4V @ 150μA

JESD-30 Code :

R-PSSO-G2

Published :

2004

ECCN Code :

EAR99

Rise Time :

60ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

100V

Nominal Vgs :

4 V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

120A

Length :

10.668mm

Series :

HEXFET®

Height :

4.826mm

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.006Ohm

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

20 ns

Terminal Position :

Single