IRFS4310TRRPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Published :

2004

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

550A

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

300W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

7670pF @ 50V

Rds On (Max) @ Id, Vgs :

7m Ω @ 75A, 10V

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.007Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

980 mJ

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

75A

Number of Elements :

1

Terminal Position :

Single

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

RoHS Status :

ROHS3 Compliant