IRFS4310PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Drain-source On Resistance-Max :

0.007Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

300W Tc

Avalanche Energy Rating (Eas) :

980 mJ

RoHS Status :

ROHS3 Compliant

Published :

2006

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

7670pF @ 50V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Pulsed Drain Current-Max (IDM) :

550A

Surface Mount :

yes

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

7m Ω @ 75A, 10V

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Case Connection :

DRAIN