IRFS4229TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Power Dissipation-Max :

330W Tc

JESD-609 Code :

e3

ECCN Code :

EAR99

Continuous Drain Current (ID) :

45A

Input Capacitance (Ciss) (Max) @ Vds :

4560pF @ 25V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Height :

4.572mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Length :

10.668mm

Gate to Source Voltage (Vgs) :

30V

Width :

9.65mm

Power Dissipation :

330W

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

31ns

Operating Temperature :

-40°C~175°C TJ

Number of Terminations :

2

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Fall Time (Typ) :

21 ns

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

250V

Series :

HEXFET®

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

48m Ω @ 26A, 10V

Factory Lead Time :

12 Weeks

Resistance :

48mOhm

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2008

Turn On Delay Time :

18 ns

Vgs (Max) :

±30V

FET Type :

N-Channel

Element Configuration :

Single

Turn-Off Delay Time :

30 ns