IRFS4229PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Series :

HEXFET®

Published :

2008

Height :

4.572mm

Nominal Vgs :

5 V

Power Dissipation-Max :

330W Tc

REACH SVHC :

No SVHC

Recovery Time :

290 ns

Rds On (Max) @ Id, Vgs :

48m Ω @ 26A, 10V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Element Configuration :

Single

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

250V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4560pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Number of Pins :

3

Continuous Drain Current (ID) :

45A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

30 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

18 ns

Vgs (Max) :

±30V

Termination :

SMD/SMT

ECCN Code :

EAR99

Width :

9.65mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Dual Supply Voltage :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Operating Temperature :

-40°C~175°C TJ

Power Dissipation :

330W

Lead Free :

Lead Free

Mount :

Surface Mount

Threshold Voltage :

5V

Length :

10.67mm