IRFS4228TRLPBF
- Mfr.Part #
- IRFS4228TRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 83A D2PAK
- Stock
- 3,308
- In Stock :
- 3,308
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance :
- 4.53nF
- Drain to Source Voltage (Vdss) :
- 150V
- Operating Temperature :
- -40°C~175°C TJ
- Rds On Max :
- 15 mΩ
- Series :
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Continuous Drain Current (ID) :
- 83A
- Packaging :
- Tape and Reel (TR)
- Drain to Source Resistance :
- 12mOhm
- Length :
- 10.668mm
- Supplier Device Package :
- D2PAK
- Rise Time :
- 59ns
- Min Operating Temperature :
- -40°C
- Turn On Delay Time :
- 18 ns
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 24 ns
- Power Dissipation :
- 330W
- Rds On (Max) @ Id, Vgs :
- 15mOhm @ 33A, 10V
- Max Operating Temperature :
- 175°C
- Power Dissipation-Max :
- 330W Tc
- Number of Pins :
- 3
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 83A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4530pF @ 25V
- Width :
- 9.65mm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 150V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- RoHS Status :
- RoHS Compliant
- Height :
- 4.572mm
- Fall Time (Typ) :
- 33 ns
- Published :
- 2007
- Datasheets
- IRFS4228TRLPBF

N-Channel Tape & Reel (TR) 15mOhm @ 33A, 10V ±30V 4530pF @ 25V 107nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4228TRLPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4530pF @ 25V.This device has a continuous drain current (ID) of [83A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=150V, the drain-source breakdown voltage is 150V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 24 ns.MOSFETs have 12mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFS4228TRLPBF Features
a continuous drain current (ID) of 83A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 12mOhm
a 150V drain to source voltage (Vdss)
IRFS4228TRLPBF Applications
There are a lot of Infineon Technologies
IRFS4228TRLPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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