IRFS4227TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Terminal Form :

Gull wing

Case Connection :

DRAIN

Series :

HEXFET®

Number of Pins :

3

Qualification Status :

Not Qualified

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

260A

Height :

4.826mm

Gate to Source Voltage (Vgs) :

30V

Resistance :

26mOhm

JESD-609 Code :

e3

Number of Elements :

1

Fall Time (Typ) :

31 ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Power Dissipation-Max :

330W Tc

Turn-Off Delay Time :

21 ns

Contact Plating :

Tin

Turn On Delay Time :

33 ns

Published :

2004

Continuous Drain Current (ID) :

62A

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Rise Time :

20ns

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

200V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

26m Ω @ 46A, 10V

Width :

9.65mm

Number of Terminations :

2

Length :

10.668mm

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Power Dissipation :

330W

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Vgs (Max) :

±30V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-40°C~175°C TJ