IRFS4227TRLPBF
- Mfr.Part #
- IRFS4227TRLPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IRFS4227 - 12V-300V N-CHANNEL PO
- Stock
- 39,144
- In Stock :
- 39,144
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 330W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.668mm
- Factory Lead Time :
- 12 Weeks
- Resistance :
- 26mOhm
- Case Connection :
- DRAIN
- Height :
- 4.826mm
- Continuous Drain Current (ID) :
- 62A
- Rise Time :
- 20ns
- Width :
- 9.65mm
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2004
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn On Delay Time :
- 33 ns
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 4600pF @ 25V
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 21 ns
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Power Dissipation-Max :
- 330W Tc
- Pulsed Drain Current-Max (IDM) :
- 260A
- Operating Temperature :
- -40°C~175°C TJ
- Series :
- HEXFET®
- Lead Free :
- Lead Free
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 46A, 10V
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 31 ns
- Drain to Source Breakdown Voltage :
- 200V
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IRFS4227TRLPBF

N-Channel Tape & Reel (TR) 26m Ω @ 46A, 10V ±30V 4600pF @ 25V 98nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS4227TRLPBF Description
IRFS4227TRLPBF is an N-channel power MOSFET transistor from the manufacturer Infineon Technologies with a Drain to Source Breakdown Voltage of 200V. The operating temperature of the IRFS4227TRLPBF is -40°C~175°C TJ and its maximum power dissipation is 330W. IRFS4227TRLPBF has 3 pins and it is available in Tape & Reel (TR) packaging way.
IRFS4227TRLPBF Features
-
Gate to Source Voltage (Vgs): 30V
-
Pulsed Drain Current-Max (IDM): 260A
-
Continuous Drain Current (ID): 62A
-
Drain to Source Breakdown Voltage: 200V
IRFS4227TRLPBF Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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