IRFS4227PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

33 ns

Turn-Off Delay Time :

21 ns

Length :

10.67mm

Width :

9.65mm

Transistor Application :

SWITCHING

Height :

4.826mm

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Radiation Hardening :

No

FET Type :

N-Channel

Power Dissipation :

330W

Rds On (Max) @ Id, Vgs :

26m Ω @ 46A, 10V

Threshold Voltage :

5V

Gate to Source Voltage (Vgs) :

30V

Nominal Vgs :

5 V

Case Connection :

DRAIN

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

31 ns

Recovery Time :

150 ns

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2005

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4600pF @ 25V

Rise Time :

20ns

Lead Free :

Lead Free

Number of Pins :

3

Operating Temperature :

-40°C~175°C TJ

Series :

HEXFET®

Power Dissipation-Max :

330W Tc

Packaging :

Tube

Termination :

SMD/SMT

Pulsed Drain Current-Max (IDM) :

260A

Continuous Drain Current (ID) :

62A

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

200V

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.026ohm

Terminal Form :

Gull wing

Dual Supply Voltage :

240V

Mounting Type :

Surface Mount

Element Configuration :

Single

REACH SVHC :

No SVHC

Number of Terminations :

2