IRFS41N15DTRLP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.1W Ta

Avalanche Energy Rating (Eas) :

470 mJ

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

164A

Threshold Voltage :

5.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Terminal Form :

Gull wing

Dual Supply Voltage :

150V

Turn On Delay Time :

16 ns

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Nominal Vgs :

5.5 V

Published :

2006

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Series :

HEXFET®

JESD-609 Code :

e3

Voltage - Rated DC :

150V

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.668mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Lead Free :

Lead Free

Rise Time :

63ns

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 25V

Fall Time (Typ) :

14 ns

Resistance :

45mOhm

Element Configuration :

Single

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

150V

Width :

9.65mm

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Packaging :

Tape and Reel (TR)

Current Rating :

41A

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Height :

4.826mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Number of Pins :

3

Continuous Drain Current (ID) :

41A

Power Dissipation :

3.1W

Vgs (Max) :

±30V

Operating Temperature :

-55°C~175°C TJ

Termination :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Elements :

1

Turn-Off Delay Time :

25 ns