IRFS41N15DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Series :

HEXFET®

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

164A

Terminal Form :

Gull wing

Vgs (Max) :

±30V

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Published :

2003

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.045Ohm

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

150V

ECCN Code :

EAR99

Terminal Position :

Single

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

470 mJ

Drain Current-Max (Abs) (ID) :

41A

Packaging :

Tube

Vgs(th) (Max) @ Id :

5.5V @ 250µA

DS Breakdown Voltage-Min :

150V

Input Capacitance (Ciss) (Max) @ Vds :

2520pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

45m Ω @ 25A, 10V

Case Connection :

DRAIN

Power Dissipation-Max :

3.1W Ta

Mounting Type :

Surface Mount

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

41A Tc