IRFS4127TRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

22m Ω @ 44A, 10V

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

250 mJ

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain to Source Breakdown Voltage :

200V

Power Dissipation :

375W

Resistance :

22mOhm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

375W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Width :

9.652mm

Lead Free :

Lead Free

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Length :

10.668mm

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Turn-Off Delay Time :

56 ns

Height :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Case Connection :

DRAIN

Mount :

Surface Mount

Rise Time :

18ns

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

72A

Turn On Delay Time :

17 ns

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Fall Time (Typ) :

22 ns

Element Configuration :

Single

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

5380pF @ 50V

Qualification Status :

Not Qualified

Factory Lead Time :

12 Weeks