IRFS4115TRL7PP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

FET Type :

N-Channel

Published :

2008

Pulsed Drain Current-Max (IDM) :

420A

Number of Terminations :

6

Series :

HEXFET®

Rise Time :

50ns

Turn-Off Delay Time :

37 ns

Rds On (Max) @ Id, Vgs :

11.8m Ω @ 63A, 10V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

18 ns

Continuous Drain Current (ID) :

105A

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

105A Tc

Power Dissipation-Max :

380W Tc

Power Dissipation :

380W

Drain to Source Breakdown Voltage :

150V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain-source On Resistance-Max :

0.0118Ohm

Transistor Element Material :

SILICON

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

23 ns

Mount :

Surface Mount

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

230 mJ

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

5320pF @ 50V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Number of Pins :

7

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G6

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.29.00.95

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V