IRFS4115PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

41 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

5V

Nominal Vgs :

5 V

REACH SVHC :

No SVHC

Number of Elements :

1

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Lead Free :

Lead Free

Power Dissipation-Max :

375W Tc

Power Dissipation :

375W

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

5270pF @ 50V

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

150V

Dual Supply Voltage :

150V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Fall Time (Typ) :

39 ns

Element Configuration :

Single

JESD-609 Code :

e3

Turn On Delay Time :

18 ns

Mounting Type :

Surface Mount

Width :

9.65mm

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Rise Time :

73ns

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Rds On (Max) @ Id, Vgs :

12.1m Ω @ 62A, 10V

Terminal Form :

Gull wing

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Published :

2008

Operating Temperature :

-55°C~175°C TJ

Resistance :

12.1mOhm

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Height :

4.826mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

99A

Mount :

Surface Mount

Length :

10.668mm

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT