IRFS4115-7PPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.668mm

Termination :

SMD/SMT

Resistance :

11.8mOhm

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

230 mJ

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

5320pF @ 50V

Nominal Vgs :

5 V

Current - Continuous Drain (Id) @ 25°C :

105A Tc

Rise Time :

50ns

Pulsed Drain Current-Max (IDM) :

420A

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Series :

HEXFET®

FET Type :

N-Channel

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

150V

Dual Supply Voltage :

150V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

37 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

11.8m Ω @ 63A, 10V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Case Connection :

DRAIN

Power Dissipation :

380W

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Number of Pins :

7

Threshold Voltage :

5V

REACH SVHC :

No SVHC

Fall Time (Typ) :

23 ns

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Continuous Drain Current (ID) :

105A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Element Configuration :

Single

ECCN Code :

EAR99

Height :

4.572mm

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G6

Turn On Delay Time :

18 ns

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation-Max :

380W Tc

Packaging :

Tube

Width :

9.65mm