IRFS4020PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.105Ohm

Continuous Drain Current (ID) :

18A

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Rise Time :

12ns

Number of Elements :

1

Width :

4.826mm

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Fall Time (Typ) :

6.3 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Power Dissipation :

100W

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

94 mJ

REACH SVHC :

No SVHC

Threshold Voltage :

4.9V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 50V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

52A

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

200V

Length :

10.668mm

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Mounting Type :

Surface Mount

Turn-Off Delay Time :

16 ns

Turn On Delay Time :

7.8 ns

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Packaging :

Tube

Drain to Source Breakdown Voltage :

200V

Published :

2007

Nominal Vgs :

4.9 V

Rds On (Max) @ Id, Vgs :

105m Ω @ 11A, 10V

Mount :

Surface Mount, Through Hole

Power Dissipation-Max :

100W Tc

Height :

4.83mm

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Terminal Form :

Gull wing

Element Configuration :

Single

Recovery Time :

120 ns

Qualification Status :

Not Qualified