IRFS4010TRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

720A

Length :

10.668mm

Turn On Delay Time :

21 ns

Power Dissipation-Max :

375W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Published :

2008

Radiation Hardening :

No

Fall Time (Typ) :

77 ns

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

375W

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 106A, 10V

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

100 ns

Continuous Drain Current (ID) :

180A

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Lead Free :

Lead Free

Series :

HEXFET®

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Height :

4.826mm

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0047Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Capacitance (Ciss) (Max) @ Vds :

9575pF @ 50V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Rise Time :

86ns

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Width :

9.65mm

Vgs (Max) :

±20V

Transistor Application :

SWITCHING