IRFS4010PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Nominal Vgs :

4 V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

9575pF @ 50V

Resistance :

4.7MOhm

Threshold Voltage :

4V

Width :

9.65mm

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

100V

Rise Time :

86ns

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Series :

HEXFET®

Turn-Off Delay Time :

100 ns

Number of Pins :

3

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Reverse Recovery Time :

72 ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

375W Tc

Fall Time (Typ) :

77 ns

Number of Elements :

1

Length :

10.668mm

Dual Supply Voltage :

100V

ECCN Code :

EAR99

Published :

2008

Contact Plating :

Tin

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

180A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Termination :

SMD/SMT

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

21 ns

Transistor Application :

SWITCHING

Height :

4.826mm

JESD-609 Code :

e3

Power Dissipation :

375W

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 106A, 10V

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

720A

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ