IRFS4010-7PPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

380W

Input Capacitance (Ciss) (Max) @ Vds :

9830pF @ 50V

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Number of Pins :

7

Terminal Form :

Gull wing

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.004ohm

Turn On Delay Time :

19 ns

REACH SVHC :

No SVHC

Mount :

Surface Mount

Transistor Element Material :

SILICON

Width :

9.65mm

Rise Time :

56ns

Nominal Vgs :

4 V

Dual Supply Voltage :

100V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

4m Ω @ 110A, 10V

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Termination :

SMD/SMT

Radiation Hardening :

No

Number of Terminations :

6

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Lead Free :

Lead Free

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

330 mJ

Current - Continuous Drain (Id) @ 25°C :

190A Tc

Fall Time (Typ) :

48 ns

Threshold Voltage :

4V

Turn-Off Delay Time :

100 ns

Series :

HEXFET®

Power Dissipation-Max :

380W Tc

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G6

Number of Elements :

1

Continuous Drain Current (ID) :

190A

Reverse Recovery Time :

60 ns

Length :

10.67mm

Published :

2005

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Height :

4.55mm

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate to Source Voltage (Vgs) :

20V