IRFS38N20DTRLP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

38A

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

54m Ω @ 26A, 10V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Radiation Hardening :

No

Published :

2002

Recovery Time :

240 ns

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Resistance :

54mOhm

Termination :

SMD/SMT

Turn On Delay Time :

16 ns

Series :

HEXFET®

Threshold Voltage :

5V

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Dual Supply Voltage :

200V

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

5 V

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Terminal Form :

Gull wing

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

44A

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Height :

4.826mm

Drain to Source Breakdown Voltage :

200V

Number of Elements :

1

Mount :

Surface Mount

JESD-609 Code :

e3

Rise Time :

95ns

Power Dissipation-Max :

3.8W Ta 300W Tc

Turn-Off Delay Time :

29 ns

Vgs (Max) :

±20V

Voltage - Rated DC :

200V

Power Dissipation :

320W

Length :

10.668mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

47 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.65mm

Avalanche Energy Rating (Eas) :

460 mJ