IRFS38N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

43A

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

180A

DS Breakdown Voltage-Min :

200V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Drain-source On Resistance-Max :

0.054Ohm

Avalanche Energy Rating (Eas) :

460 mJ

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2002

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3.8W Ta 300W Tc

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

54m Ω @ 26A, 10V